Работы, цитирующие эту работу

Работ: 2

Работа: Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

1. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.522142

2. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000218