A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Ben Kaczerimec, Kapeldreef 75, B-3001 Leuven, BelgiumJ. Francoimec, Kapeldreef 75, B-3001 Leuven, BelgiumPieter Weckximec, Kapeldreef 75, B-3001 Leuven, BelgiumPh. Rousselimec, Kapeldreef 75, B-3001 Leuven, BelgiumV. PutchaKU Leuven, ESAT Department, B-3001 Leuven, BelgiumE. Buryimec, Kapeldreef 75, B-3001 Leuven, BelgiumMarko SimicicKU Leuven, ESAT Department, B-3001 Leuven, BelgiumAdrian Chasinimec, Kapeldreef 75, B-3001 Leuven, BelgiumD. Lintenimec, Kapeldreef 75, B-3001 Leuven, BelgiumBertrand Parvaisimec, Kapeldreef 75, B-3001 Leuven, BelgiumFrancky CatthoorKU Leuven, ESAT Department, B-3001 Leuven, BelgiumG. RzepaTU Wien, Gusshausstrasse 27-29, A-1040 Vienna, AustriaMichael WaltlTU Wien, Gusshausstrasse 27-29, A-1040 Vienna, AustriaTibor GrasserTU Wien, Gusshausstrasse 27-29, A-1040 Vienna, Austria
2018en
ABI
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