Работы, цитирующие эту работу

Работ: 3

Работа: A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

1. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

   Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

   СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570281

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488

3. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018