Статья

Carrier-mediated ferromagnetism in p-Si(100) by sequential ion-implantation of B and Mn

Hung‐Ta LinDepartment of Materials Science and Engineering, National Tsing Hua University, 101,#N#Section 2, Kuang-Fu Road, Hsinchu 30013,#N#TaiwanWenchang HuangDepartment of Materials Science and Engineering, National Tsing Hua University, 101,#N#Section 2, Kuang-Fu Road, Hsinchu 30013,#N#TaiwanShuo-Hong WangDepartment of Materials Science and Engineering, National Tsing Hua University, 101,#N#Section 2, Kuang-Fu Road, Hsinchu 30013,#N#TaiwanHsiu‐Hau LinDepartment of Physics, National Tsing Hua University Hsinchu, 30013 (Taiwan)Tsung‐Shune ChinDepartment of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan

2008en

ABI

Аннотация

Ferromagnetic Si1−xMnx was prepared by implanting B+ and Mn+ ions in sequence into p-type Si(100) at room temperature and post-annealing at 700–900 °C. Superparamagnetic nano-sized silicide precipitates, 10–27 at.% Mn, were found near the surface of all Si1−xMnx samples. Annealing at 800 °C or below leads to the formation of a thin Si(Mn) layer, with 1.1 at.% Mn, ~180 nm beneath the surface, giving rise to ferromagnetism with a Curie temperature above 250 K. The high-temperature ferromagnetism is attributed to the indirect exchange mediated by localized carriers in the impurity states. The Mn content of 1–1.5 at.%, having been separately reported to show room-temperature ferromagnetism several times by different groups, seems meaningful for Si-based diluted magnetic semiconductors (DMS). Possible extensions of our work presented here are elucidated.

Перевод пока недоступен

Идентификаторы

DOI: 10.1088/0953-8984/20/9/095004

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar