Работы, цитирующие эту работу

Работ: 2

Работа: A model for the formation of amorphous Si by ion bombardment

1. Backscattering measurements of postimplantation damage profiles in silicon single crystals

   S. Kopta, E. Maydell-Ondrusz, Β. Rajchel

   СтатьяCrystallography and Radiation Phenomenaphysica status solidi (a)1978Цитирований: 0

   ABIABI:AkademIndex/openalex/1978.article.000065

2. Annealing of radiation damage in Si. A molecular dynamics study

   Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000071