Работы, цитирующие эту работу

Работ: 4

Работа: Transferable tight-binding models for silicon

1. Nonconventional tight-binding method for the calculation of the total energy and spectroscopic energies of atomic clusters: Transferable parameters for silicon

   Z. M. Khakimov, Polina Tereshchuk, N. T. Sulaymanov +2

   СтатьяAdvanced Chemical Physics StudiesPhysical Review B2005Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.492563

2. Tight‐binding molecular dynamics simulation of SiH bond dissociation in silicon clusters

   Z. M. Khakimov, F. T. Umarova, N. T. Sulaymonov +2

   СтатьяSilicon Nanostructures and PhotoluminescenceInternational Journal of Quantum Chemistry2003Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.602900

3. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

4. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320