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Работы, на которые ссылается эта работа
Работ: 21
Работа: Growth technique and structural properties of the higher manganese silicide films
The potential of higher manganese silicide as an optoelectronic thin film material
Статья2004Цитирований: 5ABIElectron microscopic investigation of MnSi1.7 layers on Si(001)
Anna Mogilatenko, M. Falke, S. Teichert +3
Статья2002Цитирований: 4ABIStructural observation of Mn silicide islands on Si(111) 7×7 surface with UHV-TEM
Q. Zhang, Masaki Takeguchi, Miyoko Tanaka +1
Статья2002Цитирований: 4ABIPreparation of manganese silicide thin films by solid phase reaction
Jin‐Liang Wang, Masaaki Hirai, M. Kusaka +1
Статья1997Цитирований: 3ABIGrowth of MnSi1.7 on Si(001) by MBE
S. Teichert, S Schwendler, D.K. Sarkar +5
Статья2001Цитирований: 3ABIEpitaxial growth of MnSi1.7 layers in the presence of an Sb flux
Yoshinaga Souno, Yoshihito Maeda, Hirokazu Tatsuoka +1
Статья2001Цитирований: 3ABIMnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
Junling Yang, Nuofu Chen, Zhikai Liu +4
Статья2001Цитирований: 3ABICrystal growth of manganese silicide, MnSi?1.73 and semiconducting properties of Mn15Si26
Iwao Kawasumi, Makoto Sakata, Isao Nishida +1
Статья1981Цитирований: 2ABIThermoelectric properties of manganese silicide films
Qiang Hou, Z.M. Wang, Y. J. HE
Статья2004Цитирований: 2ABI