Работы, цитирующие эту работу

Работ: 2

Работа: The electronic structure of impurities and other point defects in semiconductors

1. On several regularities of deep levels of d-impurities in silicon

   Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1995Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.408791

2. Temperature-dependent conversion electron Mössbauer measurements of57Fe implanted in silicon and germanium

   Barbara Sawicka, J. Sawicki, Jan Staněk +2

   СтатьяCrystallography and Radiation Phenomenaphysica status solidi (a)1979Цитирований: 0

   ABIABI:AkademIndex/openalex/1979.article.000041