Работы, цитирующие эту работу

Работ: 1

1. Annealing Effect on Passivated Deep Levels in GaN Epilayers

   Sh. U. Yuldashev, Tae Won Kang, Woon Hyung Jung +6

   СтатьяGaN-based semiconductor devices and materialsJapanese Journal of Applied Physics2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000125