Работы, цитирующие эту работу

Работ: 2

Работа: Photoconductivity and <i>n</i>- to <i>p</i>-type transition in silicon planar-doped GaAs structures with a doped cap layer

1. Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy

   P. B. Parchinskiy, Fu Yu, Yousuk Cho +1

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Crystal Growth2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000327

2. Effect of Be codoping on the photoluminescence spectra of GaMnAs

   Fucheng Yu, P. B. Parchinskiy, Dojin Kim +3

   СтатьяZnO doping and propertiesCurrent Applied Physics2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000290