Работы, цитирующие эту работу

Работ: 2

Работа: Recent developments in amorphous silicon p-n junction devices

1. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

   A. Yu. Leĭderman

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.568655

2. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

   S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.651052