Работы, цитирующие эту работу

Работ: 2

Работа: LPE growth of AlGaInAs epitaxial layers on GaAs(100)

1. Research of structures with corrugated photoreceiving surface

   A. V. Karimov

   СтатьяOptical Coatings and GratingsSemiconductor Physics Quantum Electronics & Optoelectronics2004Цитирований: 1

   ABIABI:AkademIndex/openalex/2004.article.000239

2. Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides

   D. M. Yodgorova

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000304