Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
Статья

Band inversion and transport properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>L</mml:mi></mml:math>minima in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">GaSb</mml:mi><mml:mo>(</mml:mo><mml:mi mathvariant="normal">Te</mml:mi><mml:mo>)</mml:mo></mml:math>

Ru-Yih SunDepartment of Physics, Purdue University, West Lafayette, Indiana 47907W. M. BeckerDepartment of Physics, Purdue University, West Lafayette, Indiana 47907
1974lv
ABI

Аннотация

Electrical transport measurements have been made on tellurium-doped $n$-type GaSb in the temperature range between 1.4 to 300\ifmmode^\circ\else\textdegree\fi{}K and at hydrostatic pressures up to \ensuremath{\sim} 13 kbar. Samples with concentration in the range \ensuremath{\sim} 2 \ifmmode\times\else\texttimes\fi{} ${10}^{17}$ to \ensuremath{\sim} 7 \ifmmode\times\else\texttimes\fi{} ${10}^{18}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ were investigated. At the highest pressures, the results suggest complete carrier transfer from the $\ensuremath{\Gamma}$ minimum into the $L$ minima or into impurity levels associated with the $L$ minima. The existence of the levels is confirmed by the observation of impurity conduction at low temperatures and deionization effects at elevated temperatures. An impurity activation energy of ${\ensuremath{\epsilon}}_{1}=13.8$ meV is seen for the tellurium donors in the lowest-concentration sample; the activation energy decreases with increasing concentration but remains nonzero in the highest-concentration sample. Weak-field magnetoresistance anisotropy was observed, and the relations $b+c=0$ and $d&gt;0$ for the inverted Seitz coefficients were found to hold at high pressures in the temperature range where $L$-band conduction is expected. Calculations indicate that in highly doped samples, acoustic mode scattering dominates at 300\ifmmode^\circ\else\textdegree\fi{}K, whereas at 77\ifmmode^\circ\else\textdegree\fi{}K the $L$-band carrier scattering is mainly due to ionized impurities. The results obtained for pressures insufficient to produce complete thermal decoupling between the $\ensuremath{\Gamma}$ minimum and the Te levels associated with the $L$ minima are shown to be predictable using a band model employed by Kosicki and Paul.

Перевод пока недоступен

Идентификаторы

Цитирования и источники

Цитирований: 2Использованных источников: 0