Работы, цитирующие эту работу

Работ: 2

Работа: Band inversion and transport properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>L</mml:mi></mml:math>minima in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">GaSb</mml:mi><mml:mo>(</mml:mo><mml:mi mathvariant="normal">Te</mml:mi><mml:mo>)</mml:mo></mml:math>

1. Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1?xSb

   A. A. Vilisov, V. P. Germogenov, N. K. Маksimova +1

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000106

2. Investigation of the band spectrum of semiconductors by means of a tunnel diode under pressure

   Z. M. Alekseeva, A. P. Vyatkin, А. П. Дмитриев

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000106