Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices used in Optics, Biology, and Electronics
M. KittlerIHP, Im Technologiepark 25, 15236 Frankfurt, GermanyXuegong YuIHP, Im Technologiepark 25, 15236 Frankfurt, GermanyTeimuraz MchedlidzeIHP/BTU Joint Lab, BTU Cottbus, Konrad-Wachsmann-Allee 1, 03046 Cottbus, GermanyT. ArguirovIHP, Im Technologiepark 25, 15236 Frankfurt, GermanyО. Ф. ВывенкоPermanent address: St. Petersburg State University, Uljanovskaja 1, 198904 St. Petersburg, Russia,W. SeifertIHP, Im Technologiepark 25, 15236 Frankfurt, GermanyManfred ReicheMPI für Mikrostrukturphysik, Weinberg 2, 06120 Halle, GermanyT. WilhelmMPI für Mikrostrukturphysik, Weinberg 2, 06120 Halle, GermanyM. SeibtIV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, GermanyO. VoßIV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, GermanyA. WolffIPHT, Albert-Einstein-Str. 9, 07745 Jena, GermanyWolfgang FritzscheIPHT, Albert-Einstein-Str. 9, 07745 Jena, Germany
2007en
ABI
Аннотация
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
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