The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C
L.J. JinSingapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576, SingaporeK. L. PeySchool of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, SingaporeW. K. ChoiDepartment of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, SingaporeEugene A. FitzgeraldMassachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-66307, USAD.A. AntoniadisMassachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-66307, USAArthur J. PiteraMassachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-66307, USAMinjoo Larry LeeMassachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-66307, USADongzhi ChiInstitute of Materials Science and Engineering, 3 Research Link, Singapore 117602, SingaporeC. H. TungInstitute of Microelectronics (IME), 11 Science Park Rd., Science Park 2, Singapore 117685, Singapore
2004en
ABI
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