Работы, цитирующие эту работу

Работ: 2

Работа: The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

1. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000362

2. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

   N. A. Matchanov, K. A. Bobojonov

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.010466