Работы, цитирующие эту работу

Работ: 3

Работа: High-resolution studies of sulfur- and selenium-related donor centers in silicon

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320

3. Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy

   Sh. I. Askarov, B. Z. Sharipov, Sh. K. Saliyeva +1

   СтатьяSolid-state spectroscopy and crystallographyApplied Solar Energy2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000969