Работы, цитирующие эту работу

Работ: 2

Работа: Ab initio pseudopotential calculations of point defects and boron impurity in silicon

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320