V. S. Rubin

1 та иш

Institute of Technical Physics, Academy of Sciences of the Uzbekian SSR, Tashkent

1. Computer Simulation of Current–Voltage Characteristics in Amorphous Silicon p–n Diode Structures under Impurity Photoexcitation

   S. A. Azimov, P. M. Karageoegy-Alkalaev, A. Yu. Leĭderman +1

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19860 иқтибос

   ABIABI:AkademIndex/openalex/1986.article.000141