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V. G. Khlabutin

4 та иш

Institute of Nuclear Physics, Tomsk Polytechnical Institute

  1. Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

    Vladimir I. Gridnev, V. V. Kaplin, V. G. Khlabutin +2

    МақолаCrystallography and Radiation Phenomenaphysica status solidi (b)19872 иқтибос
    ABI

  2. Observation of similarity of angular distributions of electrons at planar channeling in silicon crystal

    Vladimir I. Gridnev, V. G. Khlabutin, E. I. Rozum +1

    МақолаCrystallography and Radiation Phenomenaphysica status solidi (b)19870 иқтибос
    ABI

  3. Quantum Modulation of Electron Dechanneling

    V. G. Khlabutin, Vladimir I. Gridnev, E. I. Rozum

    МақолаNuclear materials and radiation effectsphysica status solidi (b)19880 иқтибос
    ABI

  4. Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states

    V. V. Kaplin, Vladimir I. Gridnev, V. G. Khlabutin +2

    МақолаCrystallography and Radiation Phenomenaphysica status solidi (b)19890 иқтибос
    ABI