V. Konoplev

1 та иш

Institut of Electronics, Uzbek Academy of Sciences , 700125, Tashkent, Uzbekistan

1. Annealing of radiation damage in Si. A molecular dynamics study

   Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

   МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000071