V.A. Sukhoveyev

1 та иш

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000164