Timothy J. Anderson

1 та иш

University of Florida

1. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

   Michael E. Mastro, O. Kryliouk, Todd Dann +4

   МақолаGaN-based semiconductor devices and materialsMaterials science forum20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000216