John T. Wolan

1 та иш

University of South Florida

1. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   МақолаSemiconductor materials and devicesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000245