O. R. Pardaev

1 та иш

Tashkent State Technical University, Tashkent, 100095, Uzbekistan

1. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000091