И. Д. Лошкарев

1 та иш

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences

1. PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES

   А. И. Никифоров, В.А. Тимофеев, A. I. Yakimov +5

   МақолаPhotonic and Optical Devices«Узбекский физический журнал»20180 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.001124