Мақола

PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES

А. И. НикифоровRzhanov Institute of Semiconductor Physics, National Research Tomsk State UniversityВ.А. ТимофеевRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of SciencesA. I. YakimovRzhanov Institute of Semiconductor Physics, National Research Tomsk State UniversityV. I. MashanovRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of SciencesИ. Д. ЛошкаревRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of SciencesА. К. ГутаковскийRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of SciencesO. P. PchelyakovRzhanov Institute of Semiconductor Physics, National Research Tomsk State UniversityХ. Б. АшуровInstitute of ion-plasma and laser technologies of Academy of Sciences of Uzbekistan

«Узбекский физический журнал»journal2018en

ABI

Аннотация

The formation of pseudomorphous GeSiSn layers directly on Si have been investigated. The transition from two-dimensional growth regime to three-dimensional of the GeSiSn film on Si(100) was studied for different mismatch with silicon and growth temperatures. A possibility of synthesis of multilayer structures by molecular beam epitaxy was shown. The crystal lattice constants were determined using the high-resolution transmission electron microscopy and X-ray diffractometry. The p-i-n-diodes based on multilayer GeSiSn/Si structures were created which demonstrated the photoresponse increasing by several orders of magnitude in comparison the Sn-free structures at an increase in the Sn content. Nanostructures based on GeSiSn layers have demonstrated the photoluminescence at 0.6−0.85 eV.

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Мавзулар

Photonic and Optical Devices Semiconductor Lasers and Optical Devices Photonic Crystals and Applications

Идентификаторлар

DOI: 10.52304/.v20i4.95

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