Б. О. Исаков

1 та иш

Tashkent State Technical University , 100095 Tashkent , Uzbekistan ,

1. Influence OF Impurity Atoms OF Gallium AND Antimony on the Concentration OF Optically Active Oxygen in the Silicon Lattice

   Б. О. Исаков, B.R. Rakhmonov, S. N. (Sh) Subkhonberdiev

   БошқаNeliti20200 иқтибос

   ABIABI:AkademIndex/openalex/2020.other.000074