Zikrillayev Kh. F.

1 та иш

Tashkent State Technical University, Tashkent, Uzbekistan

1. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   МақолаSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000912