G.J. Mamatova

1 та иш

Andijan state pedagogical institute, Andijan, Uzbekistan

1. Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

   T. Z. Nasirov, Akmal Turayev, M.A. Muydinova +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.012035