Youngsuk Suh

1 та иш

Department of Electronic Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan-si, Gyongsanbuk-do, 38541, Republic of Korea

1. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   МақолаSemiconductor materials and interfacesPhysica B Condensed Matter20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.001641