Effects of impurities on the residual electrical resistivity of indium and gallium

The degree of the influence of 12 different impurities on the residual resistivity ρ0 of indium and gallium was investigated. The alloys were prepared from high-purity (∼99.9999%) solvent metals with relative resistance δ4.2 = R4.2/R293 equal to (5−6) × 10−5 and (3−3.5)×10−5 respectively, in the concentration interval 10−3−0.5 wt. % for indium and 3×10−3−0.4 wt. % for gallium. The measured values of Δρ0/c (the change of the residual resistivity of the alloy per at. % of dissolved impurity) for alloys with impurities belonging to the same period reveal a quadratic dependence on the valence difference between the impurity and matrix metals. The resistivities of alloys based on these metals, calculated by the phase-shift method with allowance for the distortion of the solvent metal lattice by the impurity atoms and with the aid of the pseudopotential theory (Ashcroft's model pseudopotential and the Appapillai form factors calculated from “first principles”) are in agreement with experimental values in the best case.

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