Мақола

Parameters of silicon microdiodes fabricated by selective epitaxy

M. V. DrozdovaA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RВ. Л. СухановA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RV.V. TuchkevichA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RN.M. SchmidtA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RB. YavichA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.R

Thin Solid Filmsjournal1976en

ABI

Аннотация

Аннотация мавжуд эмас.

Мавзулар

Silicon and Solar Cell Technologies Thin-Film Transistor Technologies Integrated Circuits and Semiconductor Failure Analysis

Идентификаторлар

DOI: 10.1016/0040-6090(76)90041-9

Иқтибослар ва манбалар

0 та иқтибос3 та фойдаланилган манба

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