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Iodine Implantation in Poly-N-Vinylearbazole – an Organic Semiconductor

T. BarbaszewskiInstitute of Physics, Technical University of CracowM. DewiegaInstitute of Nuclear Physics, CracowE. LipińskaInstitute of Nuclear Physics, CracowF. StarzykInstitute of Nuclear Physics, Cracow
physica status solidi (a)journal1986en
ABI

Аннотация

Effects of iodine and xenon bombardment on organic semiconductors are investigated. A poly-N-vinylearbazole thin film is used for the ion implantation at energies in the range 30 to 80 keV. The implantation profiles are measured by secondary ion mass spectrometry (SIMS). Changes in the light absorption due to formation of charge transfer (CT) complexes are measured. [Russian Text Ignored].

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