Ушбу иш иқтибос қилган ишлар

6 та иш

Иш: “Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow

1. Epitaxial growth of Si on (1012) Al2O3 by partially ionized vapor deposition

   Saburo Shimizu, S. Komiya

   Мақола19802 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.650983

2. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

   T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

   МақолаIon-surface interactions and analysisRadiation Effects19871 иқтибос

   ABIABI:AkademIndex/openalex/1987.article.000061

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.652956

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.652957

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.652958

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.652959