Exchange conductivity and trajectory effects during injection of charge carriers into bismuth

An attempt is made to separate the volume and trajectory effects during the injection of charge carriers into bismuth and the measurement of potential of the peripheral point. It is shown that for T = 4 K and H ≲ 102Oe, the volume current makes a 10−20% contribution to the collector voltage Uc, while for H ∼ 104 Oe the volume effects play a decisive role. It is found that for one of the directions H⊥L (L is the distance between the collector and the emitter), the dependence Uc (H) has a minimum associated with the existence of magnetic-field odd components in the magnetic conductivity tensor of bismuth. As a result, the asymmetry of the collector voltage relative to the inversion of vector H is preserved up to room temperature, i.e., under the conditions l ≪ L (l is the mean free path of electrons in the bulk). Other conditions remaining the same, the position of the minimum is determined by the mean free path as well as the ratio of the sample thickness to the distance between the emitter and the collector. The results presented in this paper confirm the phenomenological computations made in the local electric field approximation. The effect of diffusive surface scattering on the dynamics of electrons in the skin layer is studied. The entire body of experimental data indicates that preference should be given to the concepts [A. I. Kopeliovich, Zh. Eksp. Teor. Fiz. 78, 987 (1980)] according to which the electron mean free path in the skin layer in a magnetic field H parallel to the surface of a plate is of the order of the bulk mean free path in the case of diffusive scattering. The idea of an experiment to study the dynamics of electrons in the skin layer of normal metals with a single type of charge carriers is formulated.

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