Ушбу иш иқтибос қилган ишлар

5 та иш

Иш: Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

1. Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

   Shigehiro Nishino, J. A. Powell, Hannes Will

   Мақола19832 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.605511

2. ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si

   Arrigo Addamiano, J.A. Sprague

   Мақола19842 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.605514

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.625433

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.625434

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.625435