1.94-μm light-emitting diodes for moisture-content measurements
А. А. ПоповA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. SherstnevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
High-power light-emitting diodes are demonstrated; they are characterized by a quantum efficiency of 5.5%, utilize a symmetric GaAlAsSb/GaInAsSb/GaAlAsSb double heterostructure, have a spontaneous-emission maximum at a wavelength of 1.94 μm, and operate in the temperature range from −80°C to +60°C. A continuous-wave optical power of 3.7 mW and a peak optical power of 90 mW in pulsed operation (τ∼1–5 ms, f=1 kHz) are attained at room temperature. The principal electrical and emission characteristics are given.
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