Investigation of implanted layers in silicon carbide by a modulation photoreflection method
H. WaltherInstitut für Optik und Quantenelektronik, Friedrich-Schiller Universität, Jena, GermanyH. KargeInstitut für Optik und Quantenelektronik, Friedrich-Schiller Universität, Jena, GermanyК. Л. МуратиковА. В. СуворовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgIgor UsovCree Research Inc., Durham, NC, 27713, USA
ABI
Аннотация
The possibility of using a modulation photoreflection method for diagnostics of ion-implanted layers in silicon carbide is considered. It is shown that the photoreflection method can be used to determine the layer thickness and also the variation in the optical parameters of the layer as a function of the implanted ion dose.
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