Investigation of the thermal stability of picosecond gallium arsenide dynistor switches
K. V. EvstigneevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. И. КорольковA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,A. V. RozhkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
The operation of GaAs n+-p-i-n 0-p + dynistor structures has been demonstrated experimentally under conditions of reversible avalanche breakdown at temperatures up to 200 °C with switching times remaining under 140 ps. A numerical simulation refined the influence of various parameters of the semiconductor on the temperature dependence of the switching characteristics.
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