Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation
V. A. PerevoshchikovScientific-Research Physicotechnical Institute, N. I. Lobachevskii Nizhnii Novgorod State University, Nizhnii NovgorodV. D. SkupovScientific-Research Physicotechnical Institute, N. I. Lobachevskii Nizhnii Novgorod State University, Nizhnii Novgorod
ABI
Аннотация
Experimental data on the dissolution of microdefects in the near-surface regions of silicon single crystals during the electrochemical formation of porous silicon layers followed by argonion irradiation are presented. A decrease in the microdefect concentration is detected near the interface with porous silicon and near the opposite surface of the samples.
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