Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

1. Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

   A. Salvador, W. Kim, Özgür Aktaş +3

   Мақола19962 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.566385

2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

   Isamu Akasaki, Hiroshi Amano, Yasuo Koide +2

   Мақола19892 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.604276

3. Spatial distribution of the luminescence in GaN thin films

   F. A. Ponce, D. P. Bour, Werner Götz +1

   Мақола19962 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.611529

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669310

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669311

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669312

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669313

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669314