On the possibility of using a semiconductor crystal as a saturable absorber and a negative feedback element
С. А. БахрамовAkadempribor Research and Development Association, Academy of Sciences of Uzbekistan, Tashkent, 700125, UzbekistanA. K. KasimovAkadempribor Research and Development Association, Academy of Sciences of Uzbekistan, Tashkent, 700125, UzbekistanШ. Д. ПайзиевAkadempribor Research and Development Association, Academy of Sciences of Uzbekistan, Tashkent, 700125, UzbekistanД. Э. ПайзиеваAkadempribor Research and Development Association, Academy of Sciences of Uzbekistan, Tashkent, 700125, Uzbekistan
ABI
Аннотация
The possibility of using a semiconductor crystal simultaneously as an element of nonlinear negative feedback and as a saturable absorber was studied. Numerical computer simulation of a laser model was performed. The calculations were carried out for a GaAs crystal. Analysis of the results showed that, at a corresponding concentration of defect levels and crystal thickness, it is possible to realize both nonlinear negative feedback and saturable absorption in the same crystal for mode locking.
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