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Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

  1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    T. Dalibor, Gerhard Pensl, H. Matsunami +4

    Мақола19975 иқтибос
    ABI

  2. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

    E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

    Мақола20004 иқтибос
    ABI

  3. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

    E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

    Мақола20033 иқтибос
    ABI

  4. Influence of proton irradiation on recombination current in 6H–SiC pn structures

    Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina +2

    Мақола19993 иқтибос
    ABI

  5. Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons

    L. Liszkay, K. Havancsák, M.F. Barthe +6

    Мақола20012 иқтибос
    ABI

  6. Optical and electrical properties of 6H α-SiC irradiated by swift xenon ions

    M. Levalois, I. Lhermitte-Sebire, P. Marié +2

    Мақола19962 иқтибос
    ABI

  7. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

    E. V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    Мақола20042 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI