Ушбу иш иқтибос қилган ишлар

5 та иш

Иш: Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

1. The Physics of Semi-Conductor Devices

   A. Quaranta

   Мақола19794 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.544348

2. Interface states at the SiO2-Si interface

   M. Schulz

   Мақола19833 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.605266

3. Inversion charge redistribution model of the high-frequency MOS capacitance

   ARNOLD T. BERMAN, D. R. Kerr

   Мақола19742 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.605268

4. Oxide thickness dependence of electron-induced surface states in MOS structures

   Tarakanov V.P.

   Мақола19752 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.610802

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.658889