An injection-type field-emission photodiode

A new photodiode based on pAlInGaAs–nGaAs–m-junctions is suggested. High photosensitivity in the diode is attained in the conditions of forward bias of the p-n-heterojunction and cut-off of the n-m-junction. Under such conditions, illumination of the structure from the intrinsic or impurity domain of the spectrum leads to diminishing the resistance of the base area due to photocarriers generated, which leads to an immediate increase in the injection current through the forward-biased p-n-junction. At the same time, the field in the cut-off n-m-junction grows together with the voltage applied. These diodes can be used for recording optical and laser radiation in the 0.8–1.6 μm range.

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