Мақола

Magnetic resistance of silicon specimens with manganese impurities

E.U. ArzikulovSamarkand State University, Universitetskii bul’v. 15, Samarkand, 703029, UzbekistanZh. T. RuzimuradovSamarkand State University, Universitetskii bul’v. 15, Samarkand, 703029, Uzbekistan

Journal of Communications Technology and Electronicsjournal2007en

ABI

Аннотация

The magnetic properties of silicon specimens implanted with manganese ions are investigated. The specimens’ surface morphology is studied via atomic force microscopy. It is shown that certain implantation doses give rise to regular nanometer-sized structures and that the formation processes are based on self-organization phenomena in strongly nonequilibrium systems. The presence of quantum-sized structures, or quantum dots, leads to a giant positive magnetoresistance of silicon specimens with manganese impurities. The magnetoresistance measurements are explained within the scope of Nagaev’s magnetic-impurity theory.

Мавзулар

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Quantum and electron transport phenomena

Идентификаторлар

DOI: 10.1134/s1064226907090148

Иқтибослар ва манбалар

1 та иқтибос 13 та фойдаланилган манба

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