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Иш: Anisotropy of magnetoresistance in Be Co-doped GaMnAs

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ABI
Spin disorder scattering mechanism of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates
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ABI
Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
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ABI
Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors
Y. Iye, A. Oiwa, Akira Endo +5
Мақола19994 иқтибос
ABI
Hall effect and hole densities in Ga1−xMnxAs
K. W. Edmonds, K. Y. Wang, R. P. Campion +4
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ABI
Magnetotransport study of temperature dependent magnetic anisotropy in a (Ga,Mn)As epilayer
Kohei Hamaya, Tomoyasu Taniyama, Y. Kitamoto +2
Мақола20033 иқтибос
ABI
Effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors
Sang‐Hoon Lee, S. J. Chung, I. S. Choi +8
Мақола20033 иқтибос
ABI
Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE
Koji Onomitsu, Hideo Fukui, Takashi Maeda +2
Мақола20052 иқтибос
ABI
Spintronics and spintronics materials
В.А. Иванов, Т. Г. Аминов, Vladimir M. Novotortsev +1
Мақола20042 иқтибос
ABI
Anisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films
Kai Wang, K. W. Edmonds, R. P. Campion +3
Мақола20052 иқтибос
ABI
Сарлавҳасиз
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ABI
Сарлавҳасиз
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Сарлавҳасиз
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Сарлавҳасиз
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ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI