Preparation of High Permittivity GdScO₃ Films by Liquid Injection MOCVD

We describe preparation and properties of GdScO3 thin films. The films were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600 ºC on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO3/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000 ºC. However, modification of the X-ray reflectivity pattern after annealing at 1000 ºC indicates increasing of the film thickness, presumably due to diffusion of silicon from the substrate into the whole volume of the film. Capacitance-voltage measurement resulted in dielectric constant of 22. It is shown, that exact stoichiometry of GdScO3 is not necessary to achieve dielectric constant above 20.

Ҳали таржима қилинмаган